发明名称 A PLATEN FOR REDUCING PARTICLE CONTAMINATION ON A SUBSTRATE AND A METHOD THEREOF
摘要 Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.
申请公布号 WO2009155508(A3) 申请公布日期 2010.03.25
申请号 WO2009US47942 申请日期 2009.06.19
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;SUURONEN, DAVID;STONE, DALE, K.;OSHIRO, SHIGEO, S.;RIAF, ARTHUR, P.;MACINTOSH, EDWARD, D. 发明人 SUURONEN, DAVID;STONE, DALE, K.;OSHIRO, SHIGEO, S.;RIAF, ARTHUR, P.;MACINTOSH, EDWARD, D.
分类号 H01L21/683;H01L21/265;H01L21/687 主分类号 H01L21/683
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