发明名称 |
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE HAVING DIFFERENT GATE STACKS BETWEEN CELL REGION AND CORE/PERIPHERAL REGION AND FABRICATION METHOD THEREOF |
摘要 |
<p>PURPOSE: An integrated circuit semiconductor device and a manufacturing method thereof are provided to prevent the deterioration of a MOS transistor on a cell region by differently forming a gate insulation layer and a gate electrode according to the cell region and a core/peri region. CONSTITUTION: An integrated circuit semiconductor device includes a semiconductor substrate(10), a first gate stack(35), and a second gate stack(42). The semiconductor substrate is divided into a cell region and a core/peri region. The gate stack includes a first gate insulation layer(16) and a first gate electrode(34). The first gate insulation layer is comprised of a silicon oxidation layer. The first gate electrode is comprised of a poly silicon layer. The poly silicon layer is doped with impurity. The second gate stack includes a second gate dielectric layer(37) and a second gate electrode(41). The second gate insulation layer includes a high-K dielectric layer. The second gate electrode includes a metal layer.</p> |
申请公布号 |
KR20100031854(A) |
申请公布日期 |
2010.03.25 |
申请号 |
KR20080090685 |
申请日期 |
2008.09.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, YOUNG JIN;SEO, KANG ILL |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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