| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic device having a shielded electronic element, and to provide a method of manufacturing a structure for performing shielding. SOLUTION: An oxide film 201 is formed on a surface of a ä100} plane silicon substrate 100; and a partial region of the oxide film is removed to form a window region 205. The silicon substrates 100, 110 are joined to each other to form an SOI (Silicon On Insulator) substrate 100a having an embedded mask 203 with the window region 205 formed. The film thickness of the substrate is reduced to form oxide films 210, 211 on both surfaces of an SOI substrate 100b; and a window region 215 is formed in a wide-area region including an upper region of the embedded window region 205. A cap with a stepped part is formed by anisotropic etching. Wire bonding for shielding is performed on the stepped part. COPYRIGHT: (C)2010,JPO&INPIT |
