| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a bonded silicon wafer, which gives a low surface roughness to an active layer by suppressing an interface roughness between an SiO<SB>2</SB>layer being an etching/polishing stop layer and a silicon wafer in a bonding method using the etching/polishing stop layer, and to provide a method of manufacturing a wafer free of blue haze in the case that a bonded wafer is a DSB wafer. SOLUTION: Oxygen ions are implanted from one wafer surface of a silicon wafer for the active layer, which is sliced so as to have wafer surfaces having a tilt angleθ(resultant angle) satisfying 0°<θ≤0.15°with respect to a surface perpendicular to the <100> direction or the <110> direction of a single crystal silicon ingot and has a substrate oxygen concentration of 10×10<SP>17</SP>/cm<SP>3</SP>to 18×10<SP>17</SP>/cm<SP>3</SP>, to form an oxygen ion implanted layer in a position at a prescribed depth from the one wafer surface of the silicon wafer for the active layer, and the silicon wafer for the active layer and a supporting silicon wafer are bonded and are subjected to heat treatment to produce an inner SiO<SB>2</SB>layer. COPYRIGHT: (C)2010,JPO&INPIT |
