发明名称 |
PROCESS FOR FORMING A CERAMIC OXIDE MATERIAL WITH A PYROCHLORE STRUCTURE HAVING A HIGH DIELECTRIC CONSTANT AND IMPLEMENTATION OF THIS PROCESS FOR APPLICATIONS IN MICROELECTRONICS |
摘要 |
The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits.
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申请公布号 |
US2010072057(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
US20090564854 |
申请日期 |
2009.09.22 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ZHU XIAOHONG;DEFAY EMMANUEL;FRIBOURG-BLANC ERIC |
分类号 |
H01G9/00;B05D3/02;C23C14/34;C23C14/35;C23C16/44 |
主分类号 |
H01G9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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