发明名称 Method for Manufacturing Semiconductor Device
摘要 To reduce current consumption in a frequency-division circuit, particularly in a multistage frequency-division circuit, in a multistage frequency-division circuit, an inputted signal has a higher frequency in a preceding stage, and an inputted signal has a lower frequency in a following stage. Thus, placement is performed preferentially from the basic cell corresponding to the frequency-division circuit into which a signal having a higher frequency is inputted, and then wiring connection is performed. In other words, the layout of a plurality of basic cells corresponding to a multistage frequency-division circuit is performed so that, as compared to a wiring into which a signal having a lower frequency is inputted, a wiring into which a signal having a higher frequency is inputted has a shorter wiring length and has less intersection with other wirings, so that parasitic capacitance and parasitic resistance of the wiring are reduced.
申请公布号 US2010071178(A1) 申请公布日期 2010.03.25
申请号 US20090562837 申请日期 2009.09.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ATSUMI TOMOAKI
分类号 H01L21/64 主分类号 H01L21/64
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