发明名称 Semiconductor Device and Method for Manufacturing the Same
摘要 An object is to provide a thin and small semiconductor device that has high reliability and high resistance to external stress and electrostatic discharge. Another object is to manufacture a semiconductor device with high yield while shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process. A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown (malfunction of the circuit or damage to a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge. By providing an antenna on the external side of the conductive shield, a sufficient communication capability is secured. With the use of a pair of insulators which sandwich the semiconductor integrated circuit, a thin and small semiconductor device that has resistance properties and high reliability can be provided. Further, shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process, so that a semiconductor device can be manufactured with high yield.
申请公布号 US2010072611(A1) 申请公布日期 2010.03.25
申请号 US20090564637 申请日期 2009.09.22
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OIKAWA YOSHIAKI;EGUCHI SHINGO
分类号 H01L23/06 主分类号 H01L23/06
代理机构 代理人
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