| 摘要 |
PURPOSE: A method for manufacturing a shallow trench isolation layer is provided to remove a dishing phenomenon on a shallow trench isolation layer region by performing a CMP(Chemical Mechanical Polishing) process by differently making a target on an STI gap fill. CONSTITUTION: A shallow trench is formed on a semiconductor substrate(200') through an etching process. A liner insulation layer(208') is formed inside the shallow trench. The shallow trench is filled by depositing a gap fill insulation layer(210'). A first chemical/mechanical polishing process is performed for etching the liner insulation layer. A second chemical/mechanical polishing process is performed for etching the gap fill insulation layer.
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