| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having superior characteristics of leakage electric current, etc. <P>SOLUTION: A longitudinal MOSFET 10 includes a GaN layer 13 being an n-type semiconductor region (the first conductivity-type semiconductor region) formed on an GaN substrate 11; and regular hexagonal ring shape wells 15 (a second conductivity-type semiconductor region) surrounding the GaN layer 13. The wells 15 is made of p-type GaN, and boundary surfaces 15a, 15b between the wells 15 and the GaN layer 13 are m-surfaces. The boundary surfaces 15a, 15b are patterned by plasma etching, and then are processed by anisotropic wet etching. According to the structure, projections/recessions in pn-joint is reduced, which are formed on the boundary surfaces 15a, 15b between the wells and the GaN layer 13. Thus, the leakage electric current is reduced, and the breakdown voltage is improved. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
