发明名称 |
LEAKAGE COMPENSATION CIRCUIT FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELLS |
摘要 |
A Dynamic Random Access Memory (DRAM) cell comprising a leakage compensation circuit. The leakage compensation circuit allows a compensation current from a source to flow to the memory cell storage node of the DRAM cell to compensate the leakage current from the memory cell storage node of the DRAM cell to improve retention time.
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申请公布号 |
US2010073994(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
US20080236302 |
申请日期 |
2008.09.23 |
申请人 |
KHALIL DIAAELDIN S;RAYEHOWDHURY ARIJIT;KHELLAH MUHAMMAD M;KESHAVARZI ALI |
发明人 |
KHALIL DIAAELDIN S.;RAYEHOWDHURY ARIJIT;KHELLAH MUHAMMAD M.;KESHAVARZI ALI |
分类号 |
G11C11/24;G11C5/14 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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