发明名称 Masks and Methods of Manufacture Thereof
摘要 Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment includes a method of generating an assist feature of a lithography mask. The method includes providing a layout for a material layer of a semiconductor device, the layout including a pattern for at least one feature of the semiconductor device. The method includes forming an assist feature in the pattern for the at least one feature, wherein the assist feature extends completely through the pattern for the at least one feature.
申请公布号 US2010073648(A1) 申请公布日期 2010.03.25
申请号 US20090626515 申请日期 2009.11.25
申请人 SCHROEDER UWE PAUL;WU CHUNG-HSI J 发明人 SCHROEDER UWE PAUL;WU CHUNG-HSI J.
分类号 G03B27/52;G03B27/42 主分类号 G03B27/52
代理机构 代理人
主权项
地址