| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly effective magnetic shield means to a magnetic random access memory (MRAM). SOLUTION: The MRAM includes: a substrate; a lower wiring layer formed on the upper part of the substrate; an upper wiring layer formed on the upper part of the lower wiring layer; a magnetic shield layer arranged at a first height between the lower wiring layer and the upper wiring layer and having a plurality of holes formed on the layer; and an MRAM element part arranged between the lower wiring layer and the upper wiring layer. The MRAM element part includes: a plurality of MRAM elements each of which is provided with a magnetization fixed layer in which magnetization is fixed and a magnetization free layer in which magnetization can be inverted; a lower connection part for connecting each of the plurality of MRAM elements to the lower wiring layer; and an upper connection part for connecting each of the plurality of MRAM elements to the upper wiring layer. In the first height, the plurality of MRAM elements are respectively arranged in the plurality of holes. Since the magnetic shield layer is arranged in the vicinity of the memory elements, a high magnetic shield effect can be obtained. COPYRIGHT: (C)2010,JPO&INPIT |
