METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can suppress variations of film thickness distributions of a buried oxide film.

SOLUTION: The method comprises: a step of polishing a surface of a to-be-polished film formed over a semiconductor substrate 10 using a polishing pad while a polishing agent containing abrasive grains and an additive comprising a surfactant is supplied onto the polishing pad 104 to planarize the surface of the to-be-polished film; and a step of further polishing the surface of the to-be-polished film using the polishing pad while the polishing agent and water are supplied onto the polishing pad, after the surface of the to-be-polished film has been planarized.

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