| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution which can obtain a high polishing speed to a polished surface containing silicon, and can suppress the occurrence of faults caused by polishing, and to provide a polishing method. <P>SOLUTION: A chemical mechanical polishing solution which is used for flattening a polished surface containing Si contains a compound having (1) a boron atom (B) in a chemical structure. A chemical mechanical polishing method used for flattening a polished surface containing Si uses the polishing solution. The polishing solution is preferred to further include (2) polishing particles and (3) an acid. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
