METHOD OF FORMING RUTHENIUM FILM

摘要

PROBLEM TO BE SOLVED: To form a high quality ruthenium film by reducing an incubation time and generating nuclei at a high density in formation of the Ru film on a dielectric film. SOLUTION: A method of forming a ruthenium film includes steps of: generating plasmas in the vicinity of a surface of a treated substrate carrying the dielectric film to reform a surface of the dielectric film with the plasmas; and supplying a ruthenium organic metal complex and an inert carrier gas to the reformed dielectric film surface to decompose the organic metal complex, thereby forming the ruthenium film on the dielectric film. COPYRIGHT: (C)2010,JPO&INPIT