| 摘要 |
A method of fabricating a semiconductor memory having word lines and bit lines disposed on a semiconductor substrate, with memory cells being formed at intersecting portions of the word lines and the bit lines. The method includes forming a first insulating film on the semiconductor substrate, forming a first polysilicon film on the first insulating film, patterning the first polysilicon film to form floating gates of the memory cells and an etching stop layer covering and surrounding contact portions of the word lines in a plan view, forming a second insulating film on the first polysilicon film, forming a conductive film on the second insulating film, patterning the conductive film to form control gates of the memory cells and strip-shaped regions as the word lines, accumulating an interlayer insulating film on the conductive film, and etching the interlayer insulating film, and opening contact holes for the contact portions.
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