| 摘要 |
Provided is a method for manufacturing a semiconductor device, wherein semiconductor substrates, each of which has a plurality of semiconductor chips respectively having semiconductor integrated circuits on the main surface, are laminated, the semiconductor chips configuring the semiconductor substrates of different layers are connected such that signals can be transmitted, and then the semiconductor chip portion is divided into pieces. The method is provided with: a first step of preparing a first semiconductor substrate and a second semiconductor substrate; a second step of thinning the second semiconductor substrate; a third step of firmly bonding the surface on the opposite side to the main surface of the thinned second semiconductor substrate to the main surface of the first semiconductor substrate with an insulating layer therebetween; a fourth step of forming a via hole on the thinned second semiconductor substrate such that the via hole penetrates from the main surface of the second semiconductor substrate to the surface on the opposite side; and a fifth step of forming a connecting section which enables transmission of signals between the semiconductor chips on the first semiconductor substrate and the semiconductor chips on the second semiconductor substrate through the via hole. |
