发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
申请公布号 US2010072172(A1) 申请公布日期 2010.03.25
申请号 US20090562137 申请日期 2009.09.18
申请人 发明人 UI AKIO;HAYASHI HISATAKA;KAMINATSUI TAKESHI;HIMORI SHINJI;YAMADA NORIKAZU;OHSE TAKESHI;ABE JUN
分类号 H01L21/3065;C23F1/02 主分类号 H01L21/3065
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