| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce interface level density in a semiconductor device such as a MOSFET with an SiO<SB>2</SB>/SiC structure. <P>SOLUTION: A Si thin film 3 is formed on one principal surface of an SiC epitaxial layer 2 formed on one principal surface of an SiC substrate 1. Nitrogen atoms are implanted into the interior of the Si thin film 3. In this state, one principal surface of the SiC epitaxial layer 2 is oxynitrided. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2010067917(A) |
申请公布日期 |
2010.03.25 |
| 申请号 |
JP20080235246 |
申请日期 |
2008.09.12 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
WADA KEIJI;CHIKUNO TAKASHI;NAMIKAWA YASUO |
| 分类号 |
H01L21/318;H01L21/28;H01L21/283;H01L21/316;H01L29/78 |
主分类号 |
H01L21/318 |
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