| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase the reliability in electric connection of a semiconductor device, and to reduce the size of the device. <P>SOLUTION: The semiconductor device 1 includes: a die pad 10d; an IC chip 12 on which a vertical element whose back electrode is in contact with the die pad 10d via metal paste 11 is formed; and a bonding wire 16 electrically connecting the die pad 10d with an electrode pad 14 disposed on a front surface of the IC chip 12. The back electrode is in conduction with the electrode pad 14 via an impurity layer in the IC chip 12. Thus, the reliability in electric connection of the semiconductor device 1 can be increased and its size can be reduced. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
