METHOD AND APPARATUS FOR CONTINUOUSLY DEPOSITING THIN FILM, FILM-DEPOSITED GLASS SUBSTRATE, AND SEMI-CONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus capable of continuously depositing various kinds of thin films on a substrate at high speed, and to provide a film-deposited glass substrate and a semi-conductor device. SOLUTION: A first feed port 131 for feeding first reactive gas 11 and a first exhaust port 135 for exhausting the first reactive gas are provided in a nucleus formation zone 115. A second feed port 132 for feeding second reactive gas 12 and a second exhaust port 136 for exhausting the second reactive gas are provided in a crystal growth zone 116. Favorable reactive gases of different kinds can be used for the first reactive gas 11 to be used for nucleus formation, and for the second reactive gas to be used for crystal growth. COPYRIGHT: (C)2010,JPO&INPIT