发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND DATA PROCESSING SYSTEM
摘要 Modification of an SOD film is promoted in a hot oxidizing atmosphere. Elements under a liner film and a semiconductor substrate are prevented from being damaged by oxidation. A semiconductor device includes a recess portion, a first liner film and a second liner film sequentially formed on inner wall side surfaces of the recess portion, the second liner film containing an oxygen atom, and an insulating region filled in the recess portion. The first liner film has a higher oxidation resistance than the second liner film.
申请公布号 US2010072542(A1) 申请公布日期 2010.03.25
申请号 US20090585361 申请日期 2009.09.14
申请人 ELPIDA MEMORY, INC. 发明人 KADOYA TOMOHIRO;SHIMAMOTO KAZUMA
分类号 H01L29/78;H01L21/762;H01L29/06 主分类号 H01L29/78
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