发明名称 SEMICONDUCTOR LIGHT EMITTING DIODE HAVING HIGH EFFICIENCY AND METHOD OF MANUFACTURING THE SAME
摘要 Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.
申请公布号 US2010075452(A1) 申请公布日期 2010.03.25
申请号 US20090627714 申请日期 2009.11.30
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 LEE JEONG-WOOK;SONG YOUN-JOON
分类号 H01L33/26;H01L33/06;H01L33/10;H01L33/22;H01L33/32 主分类号 H01L33/26
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