| 发明名称 |
METHOD OF FORMING AN MOS TRANSISTOR AND STRUCTURE THEREFOR |
| 摘要 |
In one embodiment, an MOS transistor is formed to have an active region and a termination region. Within the termination region a plurality of conductors are formed to make electrical contact to conductors that are within a plurality of trenches. The plurality of conductors in the termination region are formed to be substantially coplanar.
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| 申请公布号 |
US2010072544(A1) |
申请公布日期 |
2010.03.25 |
| 申请号 |
US20080236718 |
申请日期 |
2008.09.24 |
| 申请人 |
PEARSE JEFFREY;VENKATRAMAN PRASAD;SELLERS JAMES;BHATT HEMANSHU D |
发明人 |
PEARSE JEFFREY;VENKATRAMAN PRASAD;SELLERS JAMES;BHATT HEMANSHU D. |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
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