| 发明名称 |
Process for producing semiconductor substrate |
| 摘要 |
A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere. <IMAGE> <IMAGE> |
| 申请公布号 |
EP1251556(B1) |
申请公布日期 |
2010.03.24 |
| 申请号 |
EP20020009679 |
申请日期 |
1993.01.29 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SATO, NOBUHIKO;YONEHARA, TAKAO;SAKAGUCHI, KIYOFUMI |
| 分类号 |
H01L21/762;C30B33/00;H01L21/20;H01L21/306;H01L21/3105;H01L21/324;H01L31/18 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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