发明名称 |
ORGANIC FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
摘要 |
It is an object to provide an electrode for an organic field-effect transistor having a semiconductor layer formed of an organic semiconductor material (in the present invention, referred to as an organic field-effect transistor), which can reduce the energy barrier at an interface with the semiconductor layer. A composite layer including an organic compound and a metal oxide is used for the electrode for the organic field-effect transistor, in other words the composite layer is used for at least a part of either a source electrode or a drain electrode in the organic field-effect transistor. |
申请公布号 |
EP1820218(A4) |
申请公布日期 |
2010.03.24 |
申请号 |
EP20050814345 |
申请日期 |
2005.12.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHSAWA, NOBUHARU;HIRAKATA, YOSHIHARU;FURUKAWA, SHINOBU |
分类号 |
G02F1/1368;H01L27/28;H01L27/32;H01L51/00;H01L51/05;H01L51/10;H01L51/52 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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