| 摘要 |
<p>A compound semiconductor device, comprising a carrier transit layer (3) formed over a semiconductor substrate (1), a carrier supply layer (4) formed over said carrier transit layer (3), an n-type GaN protective layer (5) formed over said carrier supply layer (4), an AlN layer (6) formed over said n-type GaN protective layer (5), an n-type GaN layer (11) formed over said AlN layer (6), an insulator layer (7) formed over said n-type GaN layer (11), and a gate electrode (49), a source electrode (8a) and a drain electrode (8b) formed over said carrier supply layer (4).</p> |
