| 摘要 |
<p>Provided is an MOS semiconductor memory device having excellent data storage characteristics, high speed data rewriting performance, low power consumption operation performance and high reliability at the same time. A first insulating film (111) and a fifth insulating film (115) have large band gaps (111a, 115a). A third insulating film (113) has the smallest band gap (113a). A second insulating film (112) and a fourth insulating film (114) have band gaps (112a, 114a) which are of the size middle of that of the large band gap and that of the small band gap. An MOS semiconductor memory device (601) has the second insulating film and the fourth insulating film between the first and the fifth insulating films and the third insulating film.</p> |
