发明名称 |
VERTICAL CURRENT CONTROLLED SILICON ON INSULATOR (SOI) DEVICE AND METHOD OF FORMING SAME |
摘要 |
<p>A Silicon on Insulator (SOI) Integrated Circuit (IC) chip with devices such as a vertical Silicon Controlled Rectifier (SCR), vertical bipolar transistors, a vertical capacitor, a resistor and/or a vertical pinch resistor and method of making the device(s). The devices are formed in a seed hole through the SOI surface layer and insulator layer to the substrate. A buried diffusion, e.g., N-type, is formed through the seed hole in the substrate. A doped epitaxial layer is formed on the buried diffusion and may include multiple doped layers, e.g., a P-type layer and an N-type layer. Polysilicon, e.g., P-type, may be formed on the doped epitaxial layer. Contacts to the buried diffusion are formed in a contact liner.</p> |
申请公布号 |
EP2165364(A2) |
申请公布日期 |
2010.03.24 |
申请号 |
EP20080760757 |
申请日期 |
2008.06.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAUTHIER, ROBERT, JR.;LI, JUNJUN;MITRA, SOUVICK;PUTNAM, CHRISTOPHER, STEPHEN;MOUSA, MAHMOUD |
分类号 |
H01L27/02;H01L21/762;H01L29/74 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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