发明名称 Voltage booster for non-volatile memories
摘要 The invention utilizes a boost-strap method to improve switch operation in a design that is particularly advantageous for supplying high voltages within a low voltage design. A native NMOS transistor, a PMOS transistor, and a capacitor are connected in series between the high voltage source and the output, where the gate of the native NMOS is connect to the output. In an initialization phase, the plate of the capacitor connected to the output is precharged by receiving the input signal while the other plate of the capacitor is held near ground. In a subsequent enable phase, the native NMOS and PMOS transistors are turned on and the high voltage is supplied to the output.
申请公布号 KR100948902(B1) 申请公布日期 2010.03.24
申请号 KR20047007107 申请日期 2002.11.06
申请人 发明人
分类号 G11C16/12;G11C5/14;G11C16/30;H03K17/16 主分类号 G11C16/12
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