Magnetoresistance effect device and method of production of the same
摘要
<p>A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.</p>
申请公布号
EP2166581(A2)
申请公布日期
2010.03.24
申请号
EP20100150310
申请日期
2005.09.05
申请人
CANON ANELVA CORPORATION;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY
发明人
DJAYAPRAWIRA, DAVID D;TSUNEKAWA, KOJI;NAGAI, MOTONOBU;MAEHARA, HIROKI;YAMAGATA, SHINJI;WATANABE, NAOKI;YUASA, SHINJI