GaxIn1-xN SUBSTRATE AND GaxIn1-xN SUBSTRATE CLEANING METHOD

摘要

Affords Ga x In 1- x N substrates onto which high-quality epitaxial films can be stably grown, and cleaning methods for manufacturing the Ga x In 1- x N substrates. Ga x In 1- x N substrate in which the number of particles of not less than 0.2 µm particle size present on the Ga x In 1- x N substrate surface is 20 or fewer, given that the Ga x In 1- x N substrate diameter is 2 inches. Furthermore, a Ga x In 1- x N substrate in which in a photoelectron spectrum along the Ga x In 1- x N substrate surface by X-ray photoelectron spectroscopy at a take-off angle of 10°, the ratio between the peak areas of the C1 s electron and N1 s electron (C 1 s electron peak area/N 1 s electron peak area) is 3 or less.