发明名称 |
Display device and method of manufacturing the display device |
摘要 |
A wiring layer includes a signal line and covers a predetermined portion on a source region and a drain region of a crystalline silicon layer. A gate insulating layer is on the crystalline silicon layer and the wiring layer. A gate electrode layer above the gate insulating layer includes a scanning line, a gate electrode corresponding to a channel region of the crystalline silicon layer, and a capacitor electrode corresponding to a predetermined portion of the wiring layer. The capacitor electrode is formed separately from the scanning line and the gate electrode and is configured to form a capacitor with the wiring layer. An interlayer insulating film is on the gate electrode layer and the gate insulating layer. A pixel electrode layer on the interlayer insulating film includes a pixel electrode connected to the wiring layer through a contact hole in the gate insulating layer and the interlayer insulating film.
|
申请公布号 |
US7683977(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20070830474 |
申请日期 |
2007.07.30 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAGATA HITOSHI;TAKEGUCHI TORU |
分类号 |
H01L27/105;H01L21/84 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|