发明名称 |
Non-volatile memory devices with wraparound-shaped floating gate electrodes and methods of forming same |
摘要 |
Non-volatile memory devices include memory cells therein with reduced cell-to-cell coupling capacitance. These memory cells include floating gate electrodes with open-ended wraparound shapes that operate to reduce the cell-to-cell coupling capacitance in a bit line direction, while still maintaining a high coupling ratio between control and floating gate electrodes within each memory cell.
|
申请公布号 |
US7683422(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20060464324 |
申请日期 |
2006.08.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WOON-KYUNG;CHOI JEONG-HYUK;SONG JAI-HYUK |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|