发明名称 |
Nitride-based semiconductor light emitting diode |
摘要 |
A nitride-based semiconductor LED comprises an anode; a first p-type clad layer having a second n-type clad layer coming in contact with the anode, the first p-type clad layer being formed under the anode such that a portion of the first p-type clad layer comes in contact with the anode; an active layer formed under the first p-type clad layer; a first n-type clad layer having a second p-type clad layer which does not come in contact with the active layer, the first n-type clad layer being formed on the entire lower surface of the active layer; and a cathode formed under the first n-type clad layer and the second p-type clad layer so as to come in contact with a portion of the first n-type clad layer and the second p-type clad layer.
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申请公布号 |
US7683389(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20070797491 |
申请日期 |
2007.05.03 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
HA MOON WON;HWAN CHOI CHANG;NAM HWANG YOUNG |
分类号 |
H01L29/20;H01L33/32 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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