发明名称 |
Raised source/drain with super steep retrograde channel |
摘要 |
Systems and methods for raised source/drain with super steep retrograde channel. In accordance with a first embodiment of the present invention, in one embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments in accordance with the present invention may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art.
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申请公布号 |
US7683442(B1) |
申请公布日期 |
2010.03.23 |
申请号 |
US20060529972 |
申请日期 |
2006.09.29 |
申请人 |
BURR JAMES B;BAGCHI ARCHISMAN;NASRULLAH JAWAD |
发明人 |
BURR JAMES B.;BAGCHI ARCHISMAN;NASRULLAH JAWAD |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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