Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method

摘要

According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.