| 摘要 |
Charge trapping memory devices and methods are included for increasing a second bit operation window by a fringe-induced effect. The fringe-induced effect occurs in areas underneath a word line so that when a hole injection method is applied to a memory device, hole charges are stored in a charge trapping layer that intersects with a word line and the hole charges are stored along fringes of the word line. In one embodiment, a virtual ground array includes a charge trapping layer that is disposed between two dielectrics such that there is not a charge trapping layer over source and drain regions. After a hole injection is applied to the virtual ground array, hole charges are stored along fringes of each word line given the fringes of the word line has a larger electrical field relative to non-fringe areas of the word line.
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