| 摘要 |
A complementary metal oxide semiconductor (CMOS) image sensor is provided. The CMOS image sensor can include a photodiode, a transfer transistor (Tx), a reset transistor (Rx), a drive transistor (Dx), and a select transistor (Sx). The CMOS image sensor includes a floating diffusion region between the transfer transistor (Tx) and the reset transistor (Rx). The gate of the drive transistor (Dx) is formed of polysilicon and extends to and is formed on the floating diffusion region.
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