发明名称 |
Thin film transistor, method for fabricating the same and display device |
摘要 |
A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.
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申请公布号 |
US7683367(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20060644981 |
申请日期 |
2006.12.26 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
CHAE GEE SUNG;HEO JAE SEOK;JUN WOONG GI |
分类号 |
H01L35/24;H01L51/00 |
主分类号 |
H01L35/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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