发明名称 Thin film transistor, method for fabricating the same and display device
摘要 A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.
申请公布号 US7683367(B2) 申请公布日期 2010.03.23
申请号 US20060644981 申请日期 2006.12.26
申请人 LG DISPLAY CO., LTD. 发明人 CHAE GEE SUNG;HEO JAE SEOK;JUN WOONG GI
分类号 H01L35/24;H01L51/00 主分类号 H01L35/24
代理机构 代理人
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