发明名称 CMOS image sensor and related method of operation
摘要 Provided is a complementary metal oxide semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array unit having a matrix-type array of unit pixels, each unit pixel including a charge transfer element transferring charge collected in a photoelectric conversion element to a charge detection element. The charge transfer element also receives a boosted voltage signal higher than an external power voltage.
申请公布号 US7683304(B2) 申请公布日期 2010.03.23
申请号 US20070865865 申请日期 2007.10.02
申请人 SAMSUMG ELECTRONICS CO., LTD. 发明人 NAM JUNG-HYUN;RHO JAE-SEOB
分类号 H01L27/00;H04N5/357;H04N5/372;H04N5/374;H04N5/378 主分类号 H01L27/00
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