Structure for measuring body pinch resistance of high density trench MOSFET array

摘要

A structure is disclosed for measuring body pinch resistance Rp of trench MOSFET arrays on a wafer. The trench MOSFET array has a common drain layer of first conductivity type and a 2D-trench MOSFET array atop the common drain layer. The 2D-trench MOSFET array has an interdigitated array of source-body columns and gate trench columns. Each source-body column has a bottom body region of second conductivity type with up-extending finger structures. Each source-body column has top source regions of first conductivity type bridging the finger structures. The structure includes: a) A source-body column wherein each finger structure of the bottom body region has a formed top contact electrode. b) Two gate trench columns flank the source-body column and both have a formed top common gate contact electrode. Upon connection of the structure to external voltage/current measurement devices, Rp can be measured while mimicking the parasitic effect of neighboring trench MOSFETs.