发明名称 Non-volatile memory array architecture with joined word lines
摘要 In an embodiment, a non-volatile memory array wherein narrow word lines, as small as the minimum feature size width F, in separate strings, are extended outwardly from a non-volatile memory array and joined by wider connector segments. The joined word lines provide new opportunities. First, metal straps that can be formed to overlie the word lines can be joined by metal connector segments to the word lines. The connector segments can serve as an interface between the polysilicon word lines and the metal straps. Two adjacent word lines in the same string share a single metal strap using these segments thereby reducing the overall number of segments and contacts in the array. Increased width of the polysilicon joinder segments joining word lines in different strings, provides the opportunity for widening the connection beyond the minimum feature size so that contact may be readily made between the metal straps and the polysilicon word lines. Second, the joined word lines require fewer row decoder circuits. One row decoder is provided for each joined set of word lines.
申请公布号 US7684245(B2) 申请公布日期 2010.03.23
申请号 US20070928086 申请日期 2007.10.30
申请人 ATMEL CORPORATION 发明人 SCHUMANN STEVE;FRULIO MASSIMILIANO;BARTOLI SIMONE;BEDARIDA LORENZO;HUI EDWARD SHUE-CHING
分类号 G11C11/34;G11C5/06;G11C16/04 主分类号 G11C11/34
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