摘要 |
The present invention provides a method of manufacturing a flash memory device. The method includes forming a gate oxide layer on a semiconductor substrate, forming a floating gate including protrusions and depressions on its surface by patterning polysilicon deposited on the gate oxide layer, depositing a dielectric layer on the floating gate and the gate oxide layer, and forming a control gate by patterning polysilicon deposited on the dielectric layer.
|