发明名称 |
Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions |
摘要 |
In methods of forming a phase-change material layer pattern, an insulation layer having a recessed portion may be formed on a substrate, and a phase-change material layer may be formed on the insulation layer to fill the recessed portion. A first polishing process may be performed on the phase-change material layer using a first slurry composition to partially remove the phase-change material layer, the first slurry composition having a first polishing selectivity between the insulation layer and the phase-change material layer. A second polishing process may be performed on the phase-change material layer using a second slurry composition to form a phase-change material layer pattern in the recessed portion, the second slurry composition having a second polishing selectivity substantially lower than the first polishing selectivity.
|
申请公布号 |
US7682976(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20080292842 |
申请日期 |
2008.11.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JONG-YOUNG |
分类号 |
H01L21/302;B24B37/00;H01L21/304;H01L27/105;H01L45/00 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|