发明名称 |
Air gap for interconnect application |
摘要 |
The present disclosure provides a method for fabricating an integrated circuit. The method includes forming an energy removable film (ERF) on a substrate; forming a first dielectric layer on the ERF; patterning the ERF and first dielectric layer to form a trench in the ERF and the first dielectric layer; filling a conductive material in the trench; forming a ceiling layer on the first dielectric layer and conductive material filled in the trench; and applying energy to the ERF to form air gaps in the ERF after the forming of the ceiling layer.
|
申请公布号 |
US7682963(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20070867308 |
申请日期 |
2007.10.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN HAI-CHING;SINGH SUNIL KUMAR;BAO TIEN-I;SHUE SHAU-LIN;YU CHEN-HUA |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|