发明名称 Fabrication method of substrate-free light emitting diode
摘要 A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
申请公布号 US7682855(B2) 申请公布日期 2010.03.23
申请号 US20060461436 申请日期 2006.07.31
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 YANG CHIEN-CHENG;HSIAO ZHI-CHENG;HSIEH GEN-WEN
分类号 H01L21/00;H01L33/00 主分类号 H01L21/00
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