发明名称 |
Thermal treatment of nitrided oxide to improve negative bias thermal instability |
摘要 |
A method of reducing threshold voltage shift of a MOSFET transistor resulting after temperature and voltage stress, and an integrated circuit device fabricated according to the method. The method includes the steps of forming a nitrided dielectric layer on a semiconductor substrate, and subjecting the nitrided dielectric layer to an anneal at low pressure.
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申请公布号 |
US7682988(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20040930230 |
申请日期 |
2004.08.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ALSHAREEF HUSAM N.;KHAMANKAR RAJESH;VARGHESE AJITH;CHANCELLOR CATHY A.;KRISHNAN ANAND;BEVAN MALCOLM J. |
分类号 |
H01L21/31;H01L21/469;H01L21/8234 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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