| 摘要 |
<p>PURPOSE: A memory device using a network of nano-tubes or nano-wires and a method for manufacturing the same are provided to improve the integrity of the memory device by forming the network with a hetero junction structure of the nano-tubes and the nano-wires in order to allow the network to obtain a diode property. CONSTITUTION: A first electrode(31) is spaced apart from a second electrode(33). A carbon nano-tube network(32) is interposed between the first electrode and the second electrode. The network includes a diode property by including a hetero junction structure of a p-type network and an n-type network. Nano-tubes or nano-wires in which impurity is not doped are grown to form a network layer. A p-type impurity is doped into the network to form the p-type network. An n-type impurity is doped into the network to form the n-type network.</p> |
