METHOD FOR FABRICATING NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a non-volatile memory device is provided to improve a program/erase operation property and a retention property of the memory device by blocking the charge transfer through the grain boundary of a blocking insulation layer. CONSTITUTION: A tunneling insulation layer(21) and a charge trapping layer(22) are stacked on a substrate(20). A blocking insulation layer(23A) including a grain boundary is formed on the charge trapping layer. An amorphous nitride(24) is filled in the grain boundary of the blocking insulation layer. The amorphous nitride filled-blocking insulation layer is multi-crystallized by an annealing process. A gate electrode layer is formed on the blocking insulation layer.